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| Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features * Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz * High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Surface Mount Plastic Package * Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to "Tape-and-Reel Packaging for Semiconductor Devices". BASE 1 414 emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 at 900 MHz, makes this device easy to use as a low noise amplifier. The AT-41486 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 86 Plastic Package Pin Connections EMITTER 4 COLLECTOR 3 2 EMITTER Description Hewlett-Packard's AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron 4-129 5965-8928E AT-41486 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 60 500 150 -65 to 150 Thermal Resistance [2,4]: jc = 165C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6 mW/C for TC > 68C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. Part Number Ordering Information Part Number AT-41486-TR1 AT-41486-BLK Increment 1000 100 Comments Reel Bulk Note: For more information, see "Tape and Reel Packaging for Semiconductor Devices". Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB NFO Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 25 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 2.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB Min. Typ. Max. 17.5 11.5 18.0 13.5 1.4 1.7 3.0 18.0 13.0 9.0 8.0 30 150 270 0.2 1.0 1.8 GA Gain @ NFO; VCE = 8 V, IC = 10 mA dB 17.0 fT hFE ICBO IEBO CCB Gain Bandwidth Product: VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz GHz -- A A pF 0.25 Note: 1. For this test, the emitter is grounded. 4-130 AT-41486 Typical Performance, TA = 25C 24 21 18 GAIN (dB) 15 12 9 6 NF50 GA 15 14 13 GAIN (dB) 12 11 4 4V 6V 10 V NFO GA 10 V 6V 4V 16 14 2.0 GHz 12 GAIN (dB) 10 8 4.0 GHz NFO 2.0 GHz GA 4.0 GHz 8 6 NF (dB) 4 NFO 6 4 2 0 NFO (dB) 3 2 1 3 0 0.5 1.0 2.0 2 0 3.0 4.0 5.0 NFO (dB) 0 10 20 30 40 0 10 20 30 40 FREQUENCY (GHz) IC (mA) IC (mA) Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. Figure 2. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. 24 P1 dB (dBm) 40 35 20 1.0 GHz 20 P1dB 30 MSG 16 |S21E|2 GAIN (dB) 16 G1dB GAIN (dB) 25 20 15 10 MAG |S21E|2 12 2.0 GHz 12 G1 dB (dB) 8 4.0 GHz 8 5 4 0 0 10 20 30 40 0.1 0.3 0.5 1.0 3.0 6.0 IC (mA) FREQUENCY (GHz) 4 0 0 10 20 30 40 IC (mA) Figure 4. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V, f = 2.0 GHz. Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 4-131 AT-41486 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VCE = 8 V, IC Freq. S11 GHz Mag. Ang. 0.1 .74 -38 0.5 .59 -127 1.0 .56 -168 1.5 .57 169 2.0 .62 152 2.5 .63 142 3.0 .64 130 3.5 .68 122 4.0 .71 113 4.5 .74 105 5.0 .77 99 5.5 .79 93 6.0 .81 87 = 10 mA dB 28.1 22.0 16.8 13.5 11.1 9.3 7.6 6.3 5.1 4.0 3.1 2.0 1.1 S21 Mag. 25.46 12.63 6.92 4.72 3.61 2.91 2.41 2.06 1.80 1.59 1.42 1.27 1.13 Ang. 157 107 84 69 56 47 37 26 16 7 -4 -13 -22 dB -39.6 -30.2 -27.7 -26.2 -24.8 -23.4 -22.2 -20.6 -19.5 -18.0 -17.2 -16.3 -15.4 S12 Mag. .011 .031 .041 .049 .058 .068 .078 .093 .106 .125 .139 .153 .170 S22 Ang. 68 47 46 49 43 52 52 51 48 48 43 38 34 Mag. .94 .60 .49 .45 .42 .40 .39 .37 .35 .35 .35 .35 .35 Ang. -12 -29 -29 -32 -39 -42 -50 -60 -70 -84 -98 -114 -131 AT-41486 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VCE = 8 V, IC = 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .50 -75 32.0 40.01 142 0.5 .55 -158 23.2 14.38 97 1.0 .57 177 17.5 7.50 78 1.5 .57 161 14.1 5.07 65 2.0 .59 148 11.5 3.75 53 2.5 .61 139 9.6 3.02 45 3.0 .65 128 8.0 2.52 34 3.5 .70 121 6.7 2.17 24 4.0 .74 113 5.7 1.92 14 4.5 .78 107 4.7 1.72 3 5.0 .78 102 3.7 1.53 -8 5.5 .78 96 2.7 1.36 -19 6.0 .76 91 1.6 1.21 -29 A model for this device is available in the DEVICE MODELS section. dB -41.3 -34.1 -29.9 -27.3 -24.8 -22.9 -21.6 -20.1 -18.8 -17.6 -16.6 -15.4 -14.5 S12 Mag. .009 .020 .032 .043 .058 .072 .083 .099 .115 .132 .149 .169 .188 S22 Ang. 54 48 61 62 59 58 57 56 52 47 42 36 31 Mag. .85 .51 .46 .44 .43 .40 .38 .36 .34 .32 .31 .31 .33 Ang. -17 -24 -24 -28 -35 -41 -49 -59 -72 -87 -106 -125 -144 AT-41486 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.3 1.3 1.4 1.7 3.0 opt Mag .12 .10 .04 .12 .44 Ang 3 16 43 -145 -99 RN/50 0.17 0.17 0.16 0.16 0.40 4-132 86 Plastic Package Dimensions 0.51 0.13 (0.020 0.005) 4 45 1 C L 3 2.34 0.38 (0.092 0.015) 2 2.67 0.38 (0.105 0.15) 0.203 0.051 (0.006 0.002) 1.52 0.25 (0.060 0.010) 5 TYP. 0.66 0.013 (0.026 0.005) 0.30 MIN (0.012 MIN) 8 MAX 0 MIN 2.16 0.13 (0.085 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 4-133 |
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